0.18um process introduction.ppt

1、0.18um Process Flow Introduction,18LG adopt 26 Photo mask , if exclude ESD layer AA/Poly/CT/ M1M5/ V1V5 use DUV scanner (13 layer) “ DARC” Cap on Critical layer and Top M6 Poly 10sec N2(PVD),N-Well and Vt_P adjustment,Final 70 A,Thick/ Thin Gate oxide define,SAC OX RMNLH60A (50:1 HF 65sec) SAC OX TH

2、K-PO PAD (3200+-400 A) GATE1_OX PreCln NCR1DH100ARCAM GATE1_OX 800C,48A+-4 A, wet Dual GATE Photo (0.45+/-0.05um) GATE1 ETCH N(NLB75A) GATE1 Strip SPM only STI THK-PO PAD ( 3150+-180 A) GATE2_OX PreCln NCRRCAM GATE2 OX 750 C, 27+-2 A, wet,16、为什么要进行DUAL GATE OX，该OX制程如何？GATE OX ETCH方式怎样？,Thin gate,Thi

3、ck gate,16、为什么要进行DUAL GATE OX，该OX制程如何？GATE OX ETCH方式怎样？ 在工艺中，为了满足不同的开启电压要求设计了两样GATE OX。工作电压为3.3V（外围）的需要GATE OX的较之 1.8V为厚。 SAC OXIDE REMOVE-GATE1 OX 生长50AOX-DUAL GATE OXIDE PHOTO GATE OXIDE ETCH/CRS 将1.8V器件处的GOX去掉-GATE2 OX- POLY DEPOSITION 在DUAL GATE OXIDE PHOTO之后的ETCH要去除1.8V的GATE OX1，然后两边（3.3V、1.8V）

4、同时生长OX，形成70A、32A的DUAL GATE结构。,17、为什么用UNDOPE的多晶? 掺杂POLY（一般指N型）在CMOS工艺中会对PMOS的VT有较大影响，而UNDOPE的掺杂可以由后面的S、D的IMP来完成，容易控制。 1.LOGIC 产品POLY THK较大（0620UPY2000），DOPED POLY 生长有困难 MEMORY产品POLY THK较小（0530DPY0800DH/ WSI1K565）， DOPED POLY 易生长，不会对DEVICE有过多影响. Different poly temp. will cause different poly structure

5、 ,=530C - amorphous, 530580 - partial poly, 570600 - rugged/HSG , 620 - Poly Si, not thickness issue. This differnce poly structure will decide the work function between poly ,24.Salicide在两次退火过程中形成物质的特点？在Salicide形成过程中为何要两次RTA? TiN(200)的作用。Salicide过厚或者过薄有何影响。,24.Salicide在两次退火过程中形成物质的特点？在Salicide形成过程中

6、为何要两次RTA? TiN(200)的作用。Salicide过厚或者过薄有何影响。 第一次在500下退火，在S/D以及Poly上面形成Co2Si,这样会把表面的Co固定住，从而防止其沿着表面流动，这样形成的Co2Si. Salicide的电阻较大，再经过一次RTA(850)后Co2SiCoSi2,电阻率下降，若经过一次退火，Poly和S/D中的Si会扩散到side wall上，从而在侧墙上也会形成CoSi2，这样就会把Poly与D,S连接起来，造成短路。 a.由于Co在高温时易结块，在Si SC2 removes alkali ions and hydroxides and complex r

7、esidual metals. More diluted chemical ratio and lower process temperature was developed in recent years.,HF ( Hydrofluoric acid),Chemical Ratio ( By Volume ): H2O : HF = 100 : 1 ; 50:1 Process Temperature (C): 23 0.5 Major Function: Thin oxide etch, prepare an oxide free surface for critical oxide d

8、ep processes. Etch Rate: HF(100:1): 26/min on Thermal Oxide HF(50:1): 57/min on Thermal Oxide Rinse: OFR rinse in order avoid native oxide growth and particle deposited from air. Others: Hydrophobic surface is left from HF last process and cause difficulties to further rinse off surface particles.,B

9、OE ( Buffered Oxide Etch),Chemical Ratio ( By Volume ): BOE 10:1 : NH4F : HF = 10:1BOE 130:1:7 : NH4F : HF: Surfactant = 130:1:7BOE 200:1 : NH4F : HF = 200:1 Process Temperature (C): 23 0.5 Major Function: Thick oxide etch; Prevent PR liftoff so it is able to be used to etch PR coated wafers. Etch R

10、ate: 660/min for a 3-min etch on Thermal Oxide Rinse: OFR rinse in order avoid native oxide growth and particle deposited from air. Surfactant: Added to improve wetting; Get a lower ER on poly Si.,光源的分类： 光源的不同直接决定了photo 制程能力的强弱： 1. 在亚微米阶段主要使用光源为高压Hg灯特征发射谱线中在近紫外光波段的两条特征峰，g-Line(436nm) 和 I-line(365nm),我们公司只有采用I-line光源的机台，其极限制程能力为 0.25um. 2. 在深亚微米阶段，乃至进入纳米时代后由于g-Line和 I-line 光的解析能力不足,世界上普遍采用 卤族元素的化合物的特征激光谱线 KrF特征谱线 248nm，甚至ArF 的特征谱线193nm的 高频激光作为曝光光源，主要的制程能力为0.25um ,0.18um,0.13um .在其他一些辅助技术的帮助下，193nm的Scanner 甚至可