CMOS工艺流程讲解.ppt

1、Wafer Fabrication Process Technology,CMOS,Content,0.5um CMOS process flow& cross section 0.18um CMOS process flow&cross section PCM introduction,CMOS,Starting with a silicon wafer,Cross Section of the Silicon Wafer,Magnifying the Cross Section,CMOS,n/p-well Formation,Grow Thin Oxide,Deposit Nitride,

2、Deposit Resist,silicon substrate,UV Exposure,Develop Resist,Etch Nitride,n-well Implant,Remove Resist,CMOS,n/p-well Formation,silicon substrate,Grow Oxide (n-well),Remove Nitride,p-well Implant,Remove Oxide,Twin-well Drive-in,Remove Drive-In Oxide,CMOS,LOCOS Isolation,Grow Thin Oxide,Deposit Nitride

3、,Deposit Resist,UV Exposure,Develop Resist,Etch Nitride,Remove Resist,CMOS,LOCOS Isolation,Deposit Resist,UV Exposure,Develop Resist,Field Implant B,Remove Resist,Grow Field Oxide,Remove Nitride,Remove Oxide,Grow Screen Oxide,CMOS,Transistor Fabrication,Vt Implant,Deposit Resist,UV Exposure,Develop

4、Resist,Punchthrough Implant,Remove Resist,Remove Oxide,Fox,Grow Gate Oxide,CMOS,Transistor Fabrication,Deposit PolySi,PolySi Implant,Deposit Resist,UV Exposure,Develop Resist,Etch PolySi,Remove Resist,Fox,CMOS,Transistor Fabrication,Deposit Thin Oxide,Deposit Resist,UV Exposure,Develop Resist,n-LDD

5、Implant,Remove Resist,Fox,polySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p-LDD Implant,Remove Resist,Deposit Spacer Oxide,Etch Spacer Oxide,Fox,polySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,n+ S/D Implant,Remove Resist,Fox,po

6、lySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p+ S/D Implant,Remove Resist,Fox,polySi,polySi,n+,n+,CMOS,Contacts & Interconnects,Deposit BPTEOS,BPSG Reflow,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Contact Etchback,Remove Resist,Fox,polySi,p

7、olySi,n+,n+,p+,p+,CMOS,Contacts & Interconnects,Depost Metal 1,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 1,Remove Resist,Fox,polySi,polySi,p+,p+,n+,n+,BPTEOS,CMOS,Contacts & Interconnects,Deposit IMD 1,Deposit SOG,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Via Etch,R

8、emove Resist,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,CMOS,Contacts & Interconnects,Deposit Metal 2,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 2,Remove Resist,Deposit Passivation,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,IMD1,SOG,0.18um Process Cross section,Pad oxide,P Substrate,OD

9、 SiN,0.18um Process Cross section,P Substrate,0.18um Process Cross section,P Substrate,Pwell mask,Pwell,NAPT,VTN,B11 Pwell/NAPT/VTN Implant,Nwell mask,P31 Nwell/P_APT/VTP Implant,Nwell,PAPT,VTP,0.18um Process Cross section,P Substrate,Pwell,NAPT,VTN,Nwell,Nfield,PAPT,Mask 132,HF Wet dip and Grow Gat

10、e oxide-2,0.18um Process Cross section,Poly,NLDD,P Substrate,NLDD,Pwell,NAPT,VTN,Nwell,PAPT,VTP,Poly,NLDD implant,NLDD 114 mask,PLDD 113 mask,PLDD implant,0.18um Process Cross section,Poly,PLDD,PLDD,NLDD,P Substrate,NLDD,Pwell,NAPT,VTN,Nwell,PAPT,VTP,Poly,PLDD 197 mask (3.3V &1.8V),P-pocket/PLDD imp

11、,NLDD 116 mask (3.3V),NLDD2-1 As/NLDD2-2P31 imp,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,PSD 197 mask,NSD 198 mask,NSD imp,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,0.18um Process C

12、ross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,0.18um Process Cross section,Polyi,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,

13、PAPT,VTP,Polyi,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,IMD-1,W,W,W,W,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,IMD-1,W,W,W,W,Metal-1,Metal-2,0.18um Process Cross section,Metal-1,IMD-1,A-Si,Pwell,NAPT,Nwell,P

14、APT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,Metal-4,IMD-4,W,W,W,IMD-5,Metal-6,IMD-3,W,W,Metal-2,IMD-2,Metal_5,W,W,W,W,W,W,W,W,PCM,PCM就是Process Control & Monitor的简称； 同时，PCM也称为WAT：Wafer Accept Test；,PCM -Purpose,PCM 主要把线上一些工艺异常进行及时的反映，在产品入库前对其进行最后一道质量的检验，其作用归纳起来，主要有如下几点： （1）对产品进行参数质量

15、检验； （2）监控在线工艺对电参数的影响，以及工艺的波动； （3）判定WAFER PASS/FAIL的一个重要依据，客户会根据PCM 测试情况，决定接收、或拒收WAFER。 (4) Yield analysis,PCM key items,（1）Vt （2) BVD （3）Ion （4）Leakage （5）Sheet Rs （6）Rc （7）Capacitor (8) Others,PCM Test Location,PCMMOS Transistor,PCM Vt measure,PCM BVD maesure,PCM Leakage measure,PCM I-V curve,PCM I

16、nterPoly Capacitor,METAL,POLY2,POLY1,POLY2,POLY1,FOX,P-SUB,W (Capacitor Width),CAPACITOR,CAPACITOR,PCM Poly Rs,( Low Rs ),( High Rs ),Poly Resistor Marking layer,PCM NW Rs,P-SUB,N Well,Metal,N+,Contact,NCOMP (N+ implant),Nwell,N+,Nwell Resistor Marking Layer,PCM N+ Rs,P-SUB,Metal,Contact,NCOMP (N+ implant),N+,N+ Resistor Marking Layer,PCM P+ Rs,P-SUB,Metal,PCOMP (P+ implant),Nwell,P+,Nwell,PCM P+/NW,PCOMP (P+ implant),P-SUB,N Well,Metal,P+,N+,Contact,NCOMP (N+ implant),Nwell,PCM N+/Psub,NCOMP (N+