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太阳电池铸造多晶硅材料的结构缺陷及其控制李云明等29太阳电池铸造多晶硅材料的结构缺陷及其控制李云明,U,罗玉峰,张发云,胡云,王发辉1新余学院新能源科学与工程学院,新余338004;2新余学院江西省高等学校硅材料重点实验室,新余3380043中国科学院大学深圳先进技术研究院,深圳518055摘要铸造多晶硅具有高的性价比,已成为主要的光伏材料,其晶体内的结构缺陷显著影响太阳电池的转换效率。综述了传统铸造多晶硅太阳电池材料和新型黑硅太阳电池材料的研究进展,同时阐述了控制多晶硅中的杂质、晶界、位错的途径及方法。关键词多晶硅黑硅结构缺陷杂质晶界位错中图分类号TM9144文献标识码ADOI1011896JISSN1005一O23X2015013005RESTRAININGTHESTRUCTUREDEFECTSINCASTMULTICRYSTALLINESILICONMATERIALSUSEDFORSOLARCELLSLIYUNMING,U,LUOYUFENG,ZHANGFAYUN,HUYUN,WANGFAHUI1SCHOOLOFNEWENERGYSCIENCEANDENGINEERING,XINYUUNIVERSITY,XINYU338004;2KEYLABORATORYOFJIANGXIUNIVERSITYFORSILICONMATERIALS,XINGYUUNIVERSITY,XINYU338004;3SHENZHENINSTITUTESOFADVANCEDTECHNOLOGY,UNIVERSITYOFCHINESEACADEMYOFSCIENCES,SHENZHEN518055ABSTRACTCASTMULTICRYSTALLINESILICONHASBECOMETHEDOMINANTMATERIALFORSOLARCELLSFORITSHIGHPERFORMANCEPRICERATIOPROPERTIESOFTHESOLARCELLSSTRONGLYDEPENDONSTRUCTUREDEFECTSOFTHEMULTICRYSTALLINESILICONTHESTATUSQUOOFTRADITIONALMULTICRYSTALLINESILICONMATERIALSANDBLACKSILICONMATERIALSUSEDFORSOLARCELLSISDESCRIBEDINADDITION,VARIOUSROUTESTORESTRAINTHEIMPURITIES,GRAINBOUNDARIESANDDISLOCATIONSINPOLYSILICONAREANALYZEDKEYWORDSMULTICRYSTALLINESILICON,BLACKSILICON,STRUCTUREDEFECT,IMPURITY,GRAINBOUNDARY,DISLOCATION0引言目前甚至是将来,单晶硅和多晶硅都将是制造商业太阳电池的主流材料_1,而铸造多晶硅MCSI对原材料杂质的容忍度大、可规模生产、易于操作,具有相对低的成本以及较高的转换效率,市场份额已超过单晶硅太阳电池材料【3“。但铸造多晶硅的晶体缺陷,如高密度的位错、晶界、杂质、沉淀等,与少数载流子复合,显著影响多晶硅太阳电池的转换效率3。因此,本文在综述传统铸造多晶硅和新型黑硅太阳电池材料研究发展现状的基础上,着重介绍了控制多晶硅中的杂质、晶界、位错的途径及方法。1太阳电池铸造多晶硅材料的研究现状及发展要提高光伏发电的竞争力,促进光伏产业的发展,关键在于进一步降低太阳电池硅材料的成本,同时开发新工艺、新材料,不断提高太阳电池的转换效率。11降低成本硅材料太阳电池相对较高的成本严重制约了多晶硅太阳电池的大规模应用,因此,要不断降低多晶硅太阳电池的成本。目前主要有以下几种方法第一,发展新的多晶硅制备技术和方法。目前改良西门子法是制备多晶硅原材料的主流工艺,其生产技术成熟,但是高能耗、高成本仍然阻碍了硅太阳电池的发展。与此同时,具有环保、低成本、低能耗的冶金法制备多晶硅技术得到迅速发展,但在理论发展和技术应用方面仍有差距,随着研究的深入及技术的发展,冶金法可能将是降低太阳电池硅材料成本的突破口之一7。如大连理工大学开展的感应熔炼E83,昆明理工大学开展的真空冶金_G,新余学院开展的外加磁场制备多晶硅EIO3等,其目的就在于制备满足太阳电池性能要求且低成本的多晶硅。第二,降低能耗,减少损耗。如不断减薄硅片的使用厚度,不仅有助于降低成本,而且还有助于提高效率。2003年的硅片厚度为400M,目前厚度为180200M,随着厚度的不断降低,硅片的力学性能下降严重,容易脆裂等1。随着技术的进步,硅片的厚度还有望降低。此外还有坩埚免喷涂、坩埚免烧结、提高单炉产量、氮化硅粉回收及废弃石英坩埚再利用等,都有助于节约成本。12提高转换效率随着工业技术的不断进步,商业化单晶硅太阳电池效率国家自然科学基金51164O33;江西省高等学校科技落地计划项目KJLD12050;江西省教育厅科学技术研究项目12745;12746;12747;12748李云明男,1982年生,博士生,讲师,研究方向为能源材料的制备及研究EMAILLMLITTLEMING163COM32材料导报A综述篇2015年7月上第29卷第7期参考文献1KWANGMOOKPARK,MYOUNGBOKLEE,SICYOUNGCHOIINVESTIGATIONOFSURFACEFEATURESFOR172EFFICIENCYMULTICRYSTALLINESILICONSOLARCELLSJSOLARENERGYMATERSOLARCELLS,2015,1323562RAZYKOVTM,FEREKIDESCS,MORELD,ETA1SOLARPHOTOVOLTAICELECTRICITYCURRENTSTATUSANDFUTUREPROSPECTSIJ3SOLARENERGY,2011,8515803TONILEHMANN,MATTHIASTREMPA,ELKEMEISSNER,ETA1LAUESCANNERANEWMETHODFORDETERMINATIONOFGRAINORIENTATIONSANDGRAINBOUNDARYTYPESOFMULTICRYSTA1LINESILICONONAFULLWAFERSCALEJACTAMATER,2014,69I4YEXIAOYA,ZOUSHUAI,CHENKEXUN,ETA11845一EFFICIENTMULT卜CRYSTALLINESILICONSOLARCELLSWITHNOVELNANOSCALEPSEUDOPYRAMIDTEXTUREJADVFUNCTMATER,2014,2467085GANESHRB,RYNINGENB,SYVERTSENM,ETA1GROWTHANDCHARACTERIZATIONOFMU1TICRYSTALIINESILICONINGOTSBYDIRECTIONALSOLIDIFICATIONFORSOLARCELLAPPLICATIONSJENERGYPROCEDIA,2011,83716QIXIAOFANG,YUQINGHUA,ZHAOWENHAN,ETA1IMPROVEDSEEDEDDIRECTIONALSOLIDIFICATIONPROCESSFORPRODUCINGHIGHEFFICIENCYMULTCRYSTAL1INESILICONINGOTSFORSOLARCELLSI,JSOLARENERGYMATERSOLARCELLS,2014,1301187谭毅,郭校亮,石爽,等冶金法制备太阳能级多晶硅研究现状及发展趋势J材料工程,20133908张磊冶金法去除多晶硅中B杂质的研究D大连大连理工大学,20139魏奎先,郑达敏,马文会,等真空精炼提纯工业硅除钙研究J真空科学与技术学报,2014,3499781O罗玉峰,袁文佳,张发云,等轴向磁场下多晶硅铸造过程的仿真模拟EJ铸造技术,2013,34161L1盂虹辰金刚石线锯切割多晶硅片力学性能及其改善ID南昌南昌大学,201412KEIICHIROMASUKO,MASATOSHIGEMATSU,TAIKIHASHIGUCHI,ETA1ACHIEVEMENTOFMORETHAN25CONVERSIONEFFICIENCYWITHCRYSTALLINESILICONHETEROJUNCTIONSOLARCELLDIEEEJPHOTOVOHAICS,2014,46143313MIKIOTAGUCHI,AYUMUYANO,SATOSHITOHODA,ETA1247RECORDEFFICIENCYHITSOLARCELLONTHINSILICONWAFERJIEEEJPHOTOVOLTAICS,2014,419614李正平,沈文忠高效HIT太阳电池组件及其应用J上海节能,201514115MARTINAGREEN,KEITHEMERY,YOSHIHIROHISHIKAWA,ETA1SOLARCELLEFFICIENCYTABLESVERSION45JPROGPHOTOVOLTRESAPPL,2015,23116TAEJUNKIM,JONGKEUNLIM,HAENARASHIN,ETA121一EFFICIENTPERLSOLARCELLSWITHPLATEDFRONTCONTACTSONINDUSTRIAL156INRNPTYPECRYSTALLINESILICONWAFERSEJENERGYPROCEDIA,2014,5543117COLETTIG,WUY,JANSSENG,ETA1203MWTSILICONHETEROJUNCTIONSOLARCELLANOVELHETEROJUNCTIONINTEGRATEDCONCEPTEMBEDDINGLOWAGCONSUMPTIONANDHIGHMODULEEFFICIENCYI,JIEEEJPHOTOVOLT,2015,515518姜婷婷太阳电池用晶体硅中金属杂质与缺陷的相互作用研究D杭州浙江大学,201419YANGYM,YUA,HSUB,ETA1DEVELOPMENTOFHIGHPERFORMANEEMUITICRVSTALLINESILICONFORPHOTOVOLTAICINDUSTRYJPROGPHOTOVOLTRESAPPL,2015,2334020SUPAWANJOONWICHIEN,SATORUMATSUSHIMA,NORITAKAUSAMIEFFECTSOFCRYSTALDEFECTSANDTHEIRINTERACTIONSWITHIMPURITIESONELECTRICALPROPERTIESOFMUHICRYSTALLINESIEJJAPPLPHYS,2013,11313350321JANSENH,DEBOERM,LEGTENBERGR,ETA1THEBLACKSILICONMETHODAUNIVERSALMETHODFORDETERMININGTHEPARAMETERSETTINGOFAFLUORINEBASEDREACTIVEIONETCHERINDEEPSILICONTRENCHETCHINGWITHPROFILECONTROLJJMICROMECHANMICROENG,1995,51L522CHIHHUNGHSU,JIA_RENWU,YENTIENLU,ETA1FABRICATIONANDCHARACTERISTICSOFBLACKSILICONFORSOLARCELLAPPLICATIONSANOVERVIEWI,JMATERSCISEMICONDUCTORPROCESSING,2014,25223CROUCHCH,CAREYJE,WARRENDERJM,ETA1COMPARISONOFSTRUCTUREANDPROPERTIESOFFEMTOSECONDANDNANOSECONDLASETSTRUCTUREDSILICONJAPPLPHYSLETT,2004,8411185024YUANHC,YOSTVE,PAGEMR,ETA1EFFICIENTBLACKSILICONSOLARCELLWITHADENSITYGRADEDNANOPOROUSSURFACEOPTICA1PROPERTIES,PERFORMANCELIMITATIONSANDDESIGNRULESJAPP1PHYSLETT,2009,951212350125韩长安,邹帅,李建江,等高效多晶黑硅电池的产线技术J太阳能学报,2013,3412216426JIHUNOH。HAOCHIHYUAN,HOWARDMBRANZAN182EFFICIENTBLACKSILICONSOLARCELLACHIEVEDTHROUGHCONTROLOFCARRIERRECOMBINATIONINNANOSTRUCTURESJNATURENANOTECHNOL,2012,71174327刘邦武微电子所在黑硅多晶太阳能电池研究上再获突破EBOLHTTPIMEACCNXWZTKYZT201211T201211063678120HTML,2012110628YUEZHIHAO,SHENHONGLIE,JIANGYE,ETA1LARGESCALEBLACKMULTICRVSTAL1INESILICONSOLARCELLWITHCONVERSIONEFFICIENCYOVER18JAPPLPHYSA,2014,11668329胡艳,李沐益,郝海多晶硅定向凝固温度场模拟的研究进展LJ材料导报综述篇,2014,2862230YANGXI,MAWENHUI,LVGUOQIANG,ETA1AMODIFIEDVACUUMDIRECTIONALSOLIDIFICATIONSYSTEMOFMULTICRYSTAL1INESILICONBASEDONOPTIMIZINGFORHEATTRANSFERJJCRYSTALGROWTH,2014,400731GUXIN,YUXUEGONG,GUOKUANXIN,ETA1SEEDASSISTEDCASTQUASISINGLECRYSTALLINESILICONFORPHOTOVOLTAICAPPLICATIONTOWARDSHIGHEFFICIENCYANDLOWCOSTSILICONSOLARCELLSL,J太阳电池铸造多晶硅材料的结构缺陷及其控制李云明等33SOLARENERGYMATERSOLARCELLS,2012,1019532ZHANGYUNFENG,LIZAOYANG,MENGQINGEHAO,ETA1DISTRIBUTIONANDPROPAGATIONOFDISLOCATIONDEFECTSINQUASISINGLECRYSTALLINESILICONINGOTSCASTBYTHEDIRECTIONALSOLIDIFICATIONMETHODJSOLARENERGYMATERSOLARCELLS,2015,132133史冰川,李昆,亢若谷,等定向凝固法制备铸造多晶硅技术现状及发展综述LJ材料导报,2014,28专辑2318334LANCW,LANWC,LEETF,ETA1GRAINCONTROLINDIRECTIONALSOLIDIFICATIONOFPHOTOVOLTAICSILICONJJCRYSTALGROWTH,2012,3606835KOZOFUJIWARA,PANW,USAMIN,ETA1GROWTHOFSTRUCTURECONTROLLEDPOLYCRYSTALLINESILICONINGOTSFORSOLARCELLSBYCASTINGL,JACTAMATER,2006,54319136NAKAIIMAK,KUTSUKAKEK,FUIIWARAK,ETATARRANGEMENTOFDENDRITECRYSTALSGROWNALONGTHEBOTTOMOFSIINGOTSUSINGTHEDENDRITICCASTINGMETHODBYCONTROLLINGTHERMALCONDUCTIVITYUNDERCRUCIBLESJJCRYSTALGROWTH,2011,3191337LITF,HUANGHC,TSAIHW,ETA1ANENHANCEDCOOLINGDESIGNINDIRECTIONALSOLIDIFICATIONFORHIGHQUALITYMULTICRYSTALLINESOLARSILICONL,JJCRYSTALGROWTH,2012,34020238WONGYT,HSUC,LANCWDEVELOPMENTOFGRAINSTRUCTURESOFMULTICRYSTALLINESILICONFROMRANDOMLYORIENTATEDSEEDSINDIRECTIONALSOIIDIFICATI0NJJCRYSTALGROWTH,2014,3871039SUPAWANJOONWICHIEN,ISAOTAKAHASHI,SATORUMATSUSHIMA,ETA1TOWARDSIMPLEMENTATIONOFFLOATINGCASTMETHODFORGROWINGLARGESCALEHIGHQUALITYMUITICRYSTALLINESILICONINGOTUSINGDESIGNEDDOUBLECRUCIBLESJPROGPHOTOVOLTRESAPPL,2014,2272640ISAOTAKAHASHI,SUPAWANJOONWICHIEN,SATORUMATSUSHIMA,ETA1RELATIONSHIPBETWEENDISLOCATIONDENSITYANDCONTACTANGLEOFDENDRITECRYSTALSINPRACTICALSIZESILICONINGOTL,JJAPPLPHYS,2015,11709570141TANGXIAOHUI。LAURENTAFRANCIS,LONGFEIGONG,ETA1CHARACTERIZATIONOFHIGHEFFICIENCYMULTICRYSTAL1INESILICONININDUSTRIALPRODUCTIONJSOLARENERGYMATERSOLARCELLS,2013,1L722542辛超铸造多晶硅位错及其热处理消除研究D南昌南昌大学,201143CHOIHJ,BERTONIMI,HOFSTETTERJ,ETA1DISLOCATIONDENSITYREDUCTIONDURINGIMPURITYGETTERINGINMULTICRYSTAL1INESILICONJIEEEJPHOTOVOLT,2013,3118944ISAOTAKAHASHI,NORITAKAUSAMI,HIROSHIMIZUSEKI,ETA1IMPACTOFTYPEOFCRYSTALDEFECTSINMULTICRYSTA1LINESIONELECTRICALPROPERTIESANDINTERACTIONWITHIMPURITIESLJJAPPLPHYS,2011,10903350445SUPAWANJOONWICHIEN,ISAOTAKAHASHI,SATORUMATSUSHIMA,ETA1ENHANCEDPHOSPHORUSGETTERINGOFIMPURITIESINMULTICRYSTALLINESILICONATLOWTEMPERATUREJENERGYPROEEDIA,2014,5520346ANAPERAL,JOS6MANUELMIGUEZ,RAM6NORDDS,ETA1LIFETIMEIMPROVEMENTAFTERPHOSPHOROUSDIFFUSIONGETTERINGONUPGRADEDMETALLURGICALGRADESILICONJSOLARENERGYMATERSOLARCELLS,2014,13068647LINDROOSJ,BOULFRADY,YLIKOSKIM,ETA1PREVENTINGLIGHTINDUCEDDEGRADATIONINMULTICRYSTALLINESILICONJJAPPLPHYS,2014,11515490248MARISADISABATINO,GAUTESTOKKANDEFECTGENERATION,ADVANCEDCRYSTALLIZATION,ANDCHARACTERIZATIONMETHODSFORHIGHQUALITYSOLARCELLSILICONJPHYSSTATUSSOLIDIA,2013,2104641责任编辑余波上接第11页82KONGFY,ETA1TEMPLATEFREEHYDROTHERMALSYNTHESISOFVO2HOLLOWMICROSPHERESJCRYSTENGCOMM,2012,1411385883FENGCQ,ETA1SYNTHESISOFSPHERICALPOROUSVANADIUMPENTOXIDEANDITSELECTROCHEMICALPROPERTIESLJJPOWERSOURCES,2008,184248584SASIDHARANM,ETA1V205HOLLOWNANOSPHERESALITHIUMINTERCALATIONHOSTWITHGOODRATECAPABILITYANDCAPACITYRETENTION口JELECTROCHEMSOC,2012,1595A61885RUIX,ETA1REDUCEDGRAPHENEOXIDESUPPORTEDHIGHLYPOROUSVZ05S

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